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P396 – 4″ UHV sputter deposition CEITEC


UHV sputter deposition system for thin film and multilayer deposition at 4″ substrates

Year of delivery


Installation site

CEITEC, Brno, Czech republic

Design Features

  • UHV magnetron sputter deposition system with confocal sputter up configuration.
  • Up to nine 2″ magnetrons in confocal configuration.
    • 2″ magnetrons with manual in situ tilting.
    • Four magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
    • RF – DC switching unit installed.
    • High power impulse magnetron sputtering (HiPIMS) possible.
  • Fully motorized 2 axes sample manipulator with integrated sample shutter, DC Bias potential option and maximal sample temperature well above 800°C.
  • Integrated bake out system.
  • Load lock chamber with installed lamp heating option and oxidation setup.

Special Features

  • Face to face sputtering possible by using sample holders with tilted samples.
  • System is prepared to be added to a cluster tool via second transfer port at sputtering chamber

Outer Dimensions

Technical specifications and performance values


Sputtering chamber


700 mm diameter, about 750 mm height


stainless steel

Load lock chamber


200 mm diameter, about 300 mm height


stainless steel


Sputtering chamber

Base pressure

< 3 *10-9 mbar

Pump down time

< 7 hours to < 5 * 10-7 mbar

Chamber pumping

Turbo pumping stage, chamber lid differentially pumped by dry foreline pump

Bake out

< 150°C

Load lock chamber

Base pressure

< 10-7 mbar

Pump down time

2.5 hours to < 10-7 mbar

Chamber pumping

Turbo pumping stage with dry foreline pump

Manipulator features

Sputtering chamber

Sample size

diameter max. 4″ substrate

Motion axes

2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)

Pneumatic sample shutter (part of the manipulator head)


Room temperature (not stabilized) up to 850°C at sample

Special features

Sample bias (RF, DC or pulsed DC) is possible

Sample preparation features

Load lock chamber

Oxydation / Nitration

max. 10-2 mbar neutral oxygen / nitrogen gas (using a manual gas dosing valve)

Thermal treatment

max. 450°C at sample (no temperature regulation)

Performance test results

Chamber pump down
Long time sample heating