P323 – 4″ UHV multitech. deposition system NUS
Application
Multi chamber system as combination of UHV MBE system & UHV sputter deposition system for thin film and multilayer deposition at 4″ substrates
Year of delivery
2011
Installation site
National University of Singapore
Design Features
- Multitechnique deposition system consting a UHV magnetron sputter deposition system and a UHV MBE system connected to a UHV sample preparation chamber.
- UHV magnetron sputter deposition system with combination of confocal and face to face sputter up configurations.
- Up to eight 2″ magnetrons in confocal configuration and one 4″ magnetrons in face to face configuration.
- All 2″ magnetrons mounted at fixed angle.
- All 2″ magnetrons with easy changeable magnetic system for use with ferromagentic or non-ferromagnetic target materials.
- DC / Pulsed DC / RF switching unit (two sources connected to one generator).
- Fully motorized 2 axes sample manipulator with integrated sample shutter and maximal sample temperature above 600°C.
- Up to eight 2″ magnetrons in confocal configuration and one 4″ magnetrons in face to face configuration.
- UHV MBE system with combination of up to eight effusion cells in confocal configuration and two e-beam sources in face to face configuration.
- Hot filament effusion cells as well as dual filament effusion cells possible.
- E-Beam sources as linear multipocket e-beam with motorized pocket exchange.
- Fully motorized 2 axes sample manipulator with integrated sample shutter and maximal sample temperature well above 800°C.
- Preperation chamber with moveable magnet setup and ion source.
- Load lock chamber with storage and lamp heating option.
- Integrated bake out system.
Special Features
- RF frequency of 40.68 MHz used for RF sputtering.
- At least two different sample sizes (4″ and 3″ wafer) can be handled (using different kind of sample holders).
Outer Dimensions
Technical specifications and performance values
General
Sputtering chamber
Size
About 600 mm diameter, about 900 mm height
Material
stainless steel
MBE chamber
Size
About 600 mm diameter, about 930 mm height
Material
stainless steel
Sample preparation chamber
Size
About 400 mm diameter, about 1150 mm height
Material
stainless steel
Load lock chamber
Size
About 250 mm diameter, about 670 mm height
Material
stainless steel
Vacuum
Sputtering chamber
Base pressure
< 10-9 mbar
Pump down time
1.5 hours to < 10-6 mbar
Chamber pumping
Turbo pumping stage in combination with titanium sublimation pumping stage, chamber lid differentially pumped by dry foreline pump
Bake out
< 150°C
MBE chamber
Base pressure
< 7 * 10-11 mbar
Pump down time
2 hours to < 10-6 mbar
Chamber pumping
Turbo pumping stage in combination with titanium sublimation pumping stage, ion getter pumping stage and dry foreline pump
Bake out
< 200°C (inside bake out tent)
Sample preparation chamber
Base pressure
< 5 * 10-9 mbar
Pump down time
1.5 hours to < 2 * 10-6 mbar
Chamber pumping
Turbo pumping stage with dry foreline pump
Bake out
< 120°C
Load lock chamber
Base pressure
< 3 * 10-8 mbar
Pump down time
1 hour to < 5 * 10-6 mbar
Chamber pumping
Turbo pumping stage, chamber door differentially pumped by dry foreline pump
Manipulator features
Sputtering chamber
Sample size
diameter max. 4″ substrate
Motion axes
2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)
Temperatures
Room temperature (not stabilized) up to 600°C at sample
MBE chamber
Sample size
diameter max. 4″ substrate
Motion axes
2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)
Temperatures
Room temperature (not stabilized) up to 1000°C at sample
Sample preparation chamber
Sample size
diameter max. 4″ substrate
Motion axes
2 motorized axes (manipulator z translation and (continous) rotation of the sample stage)
Temperatures
Room temperature (not stabilized) up to 600°C at sample
Sample preparation features
Sample preparation chamber
Ion beam etching /
sample precleaning
Variable ion source to sample distance
Wide range variable ion energy and ion beam current
Plasma treatment
max. 10-3 mbar partly ionised argon gas (using a griddless ion gun)
Load lock chamber
Thermal treatment
max. 180°C at sample (no temperature regulation)
Performance test results
Chamber pump down (part 1)
Chamber pump down (part 2)
Long time sample heating (sputter chamber)
Long time sample heating (sample preparation chamber)
Deposition homogeneity (confocal sputtering)
Magnet performance (Sample preparation chamber)
Deposition homogeneity (face to face sputtering)
RGA at base pressure (MBE chamber)
